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ASG304
DC-2000 MHz SiGe HBT Amplifier Features
*SiGe Technology *18 dB Gain at 900 MHz *+24 dBm P1dB *+41 dBm Output IP3 *2.6 dB Noise Figure *MTTF > 100 Years *Single +6 V Supply *SOT-89 Surface Mount Package
Description
The ASG304 is designed for high linearity, high gain, and low noise over a wide range of frequency, being suitable for use in both receiver and transmitter of wireless and wireline telecommunication systems. The product is manufactured using a state-of-the-art SiGe HBT process of the company's own, making it cost-effective and highly reliable. The amplifiers are available in a low cost SOT-89 package completing stringent DC and RF tests.
Package Style: SOT-89
Specifications 1)
Parameters Frequency Range Gain Input VSWR Output IP3
3) 2) 2)
Applications
Units MHz dB dBm dB dBm mA V
4)
Min.
Typ. 250 - 2000
Max.
*CDMA, GSM, W-CDMA, PCS *PA Driver Amplifier *Gain Block *CATV Amplifier *IF Amplifier
17.5
18 1.2 1.7
Output VSWR Noise Figure Output P1dB
39
41 2.6 24 110 6 32
45
Supply Current Supply Voltage Thermal Resistance, Rth
More Information
Tel: (82) 42-528-7220 Fax: (82) 42-528-7222 ASB, Inc., 4 FI. Venture Town Bldg., 367-17 Goijeong-Dong, Seo-Gu, Daejon 302-716, Korea
th
C/W
1) Measurement conditions are as follows: T = 25C, VCC = 6 V, Freq. = 900 MHz, 50 ohm system. 2) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 3) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. 4) The thermal resistance was determined at a DC power of 0.834 W (VCC=6 V, IC=139 mA) with RF signal and a lead temperature of 85.2 C.
Absolute Maximum Ratings
Parameters Operating Case Temperature Storage Temperature Supply Voltage Operating Junction Temperature Input RF Power (continuous)
1)
Rating -40 to + 85C -40 to + 150C 8V 150C +3 dB above Input P1dB
1)
Remarks
1) Contact us for detailed information about a higher input power operation.
Application Notes
Application Circuit for 950 MHz (GSM) Application Circuit for 1750 MHz Application Circuit for 2250-2750 MHz Application Circuit for 900 MHz (5 V)
Ordering Information
Part Number ASG304 EB-ASG304-900 EB-ASG304-2000 EB-ASG304-1750 EB-ASG304-IF EB-ASG304-CATV Description High linearity medium power amplifier (Available in tape and reel) Fully assembled evaluation kit (900 MHz) Fully assembled evaluation kit (2000 MHz) Fully assembled evaluation kit (1750 MHz) Fully assembled evaluation kit (10-200 MHz) Fully assembled evaluation kit (50-860 MHz)
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June 2003
ASG304
Outline Drawing
(Unit: mm)
3 a 2 2
1
Pin Description
Function Input Ground Output
Pin No. 1 2 3
Land Pattern
Mounting Configuration
(Unit: mm)
Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of lead pin 2 for better RF and thermal performance, as shown in the drawing at the left side.
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June 2003
ASG304
Application Circuit: 900 MHz
Typical Performance
Frequency Magnitude S21 Magnitude S11 Magnitude S22 Output P1dB Output IP3
2) 1) 1)
Schematic
900 MHz 18 dB -24 dB -11 dB 24 dBm 41 dBm 2.6 dB 6V 110 mA
RF IN C2=8 pF R1=7.5 k C1=10 pF L1=100 nH Vcc=6 V C4= C5= C6= 100 pF 1000 pF 0.1F
50
3 mm
ASG304 C3=100 pF
RF OUT
Noise Figure Supply Voltage Current
1) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 2) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. 2 Board Layout (FR4, 40x40 mm , 0.8T)
Gain vs. Temperature
20
19
Gain (dB)
18
17
Frequency=900 MHz
16 -60
-1 5
-2 0
-2 5
S12 [dB]
-3 0
85oC
-3 5
25oC -40oC
-40
-20
0
20
o
40
60
80
100
-4 0 6 00
7 00
80 0
90 0
100 0
11 00
1 200
Freq uenc y [MHz ]
Temperature ( C)
S-parameters
10
-15
0
-20
-10
S11 (dB)
-25
-20
-30
85 C o 25 C o -40 C
o
S12 (dB)
-30
-40
-35
85 C o 25 C o -40 C
o
-50 600
700
800
900
1000
1100
1200
-40 600
700
800
900
1000
1100
1200
Frequency (MHz)
Frequency (MHz)
25
5
20
0
15
-5
S21 (dB)
10
S22 (dB)
5
85 C o 25 C o -40 C
o
-10
-15
85 C o 25 C o -40 C
o
0 600
700
800
900
1000
1100
1200
-20 600
700
800
900
1000
1100
1200
Frequency (MHz)
Frequency (MHz)
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June 2003
ASG304
P1dB vs. Frequency
30
Output IP3 vs. Frequency (Pout per tone = 8 dBm)
60
28
85 C o 25 C o -40 C
o
55 50
85 C o 25 C o -40 C
o
Output IP3 (dBm)
P1dB (dBm)
26
45 40 35 30 25
24
22
20 800
825
850
875
900
925
950
20 800
825
850
875
900
925
950
Frequency (MHz)
Frequency (MHz)
Output IP3 vs. Tone Power (Frequency = 900 MHz)
60 55 50
880 MHz Adjacent Channel Power vs. Channel Output Power
IS-95, 9 Channels Forward
-20 -25
Adjacent Channel Power (dBc)
85 C o 25 C o -40 C
o
-30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 4 6
Output IP3 (dBm)
85 C o 25 C o -40 C
o
45 40 35 30 25 20
8
9
10
11
12
13
14
15
16
8
10
12
14
16
18
20
Pout per tone (dBm)
Channel Output Power (dBm)
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June 2003
ASG304
Application Circuit: 2000 MHz
Typical Performance
Frequency Magnitude S21 Magnitude S11 Magnitude S22 Output P1dB Output IP3
2) 1) 1)
Schematic
2000 MHz 10.5 dB -20 dB -15 dB 24 dBm 40 dBm 3.5 dB 6V 110 mA
5 mm RF IN L2=3.3 nH C1=10 pF ASG304 C2=2.7 pF GND R1=7.5 k L1=56 nH Vcc=6 V C4= 100 pF C5= 1000 pF C6= 0.1 F
50
8.75 mm C3=5 pF
RF OUT
Noise Figure Supply Voltage Current
1) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) and inductor (L2) along an input transmission line. 2) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz.
Gain vs. Temperature
14
Board Layout (FR4, 40x40 mm2, 0.8T)
13
Gain (dB)
12
11
Frequency=2 GHz
10 -60 -40 -20 0 20
o
40
60
80
100
Temperature ( C)
S-parameters
20
-10
0
85 C o 25 C o -40 C
o
-15
85 C o 25 C o -40 C
o
S11 (dB)
S12 (dB)
-20
-20
-40
-25
-60 1800
1900
2000
2100
2200
-30 1800
1900
2000
2100
2200
Frequency (MHz)
20
Frequency (MHz)
10
15
85 C o 25 C o -40 C
o
0
85 C o 25 C o -40 C
o
S21 (dB)
S22 (dB)
10
-10
5
-20
0 1800
1900
2000
2100
2200
-30 1800
1900
2000
2100
2200
Frequency (MHz)
Frequency (MHz)
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June 2003
ASG304
P1dB vs. Frequency
30
Output IP3 vs. Frequency (Pout per tone = 8 dBm)
60
28
85 C o 25 C o -40 C
o
55 50
85 C o 25 C o -40 C
o
Output IP3 (dBm)
1900 2000 2100
P1dB (dBm)
26
45 40 35 30 25
24
22
20 1800
20 1800
1900
2000
2100
Frequency (MHz)
Frequency (MHz)
Output IP3 vs. Tone Power (Frequency = 2 GHz)
60 55 50
1960 MHz Adjacent Channel Power vs. Channel Output Power
IS-95, 9 Channels Forward
-20 -25
o
Adjacent Channel Power (dBc)
85 C o 25 C o -40 C
o
-30 -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 4 6
85 C o 25 C o -40 C
Output IP3 (dBm)
45 40 35 30 25 20
8
10
12
14
16
8
10
12
14
16
18
20
Pout per tone (dBm)
Channel Output Power (dBm)
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June 2003
ASG304
Application Circuit: 50-860 MHz for CATV
Typical Performance * Zo=50 , Vcc=6 V, Ic=120 mA
Parameters Gain Output P1dB S11 S22 S12 Noise Figure OIP3 OIP2 Units dB dBm dB dB dB dB dBm dBm Frequency (MHz) 50 13.3 22 -8.1 -8.4 -43 5.2 36 49 250 13.4 23 -8.2 -9.5 -41 5.4 38 52 450 13.2 22.4 -9.1 -9.2 -37 5.9 37 53 650 13.6 22 -12 -8.8 -33 5.9 33 63 850 13.1 21.5 -15.8 -10.1 -30 5.6 35 70
Schematic
C5= C6= C7= 100 pF 1000 pF 0.1 F R1=7.5 k R4=270 C4=1000 pF ASG304 C1=1000 pF C2=3.3 pF C3=1000 pF L1=39 nH L2=100 nH
Board Layout (FR4, 40x40 mm2, 0.8T)
Vcc=6 V
R2=20 RF IN
R3=20 RF OUT
S-parameters
0
20
S11 and S22 (dB)
-5
15
-10
S21 (dB)
800 1000
S11
10
-15
5
S22
-20
0
200
400
600
0
0
200
400
600
800
1000
Frequency (MHz)
Frequency (MHz)
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June 2003
ASG304
OIP vs. Frequency
80 70
10
Noise Figure vs. Frequency
OIP2
8
OIP2 and OIP3 (dBm)
Noise Figure (dB)
60 50 40 30
6
4
OIP3
20 10
2
0
200
400
600
800
1000
0
0
200
400
600
800
1000
Frequency (MHz)
Frequency (MHz)
Application Circuit: 10-200 MHz for IF
Typical Performance
Frequency (MHz) Magnitude S21 (dB) Magnitude S11 (dB) Magnitude S22 (dB) Output P1dB (dBm) Output IP3
1)
Schematic
100 19.6 -13.5 -11.0 22.0 37 5.6 5 113 100 19.7 -13.5 -11.0 22.8 36 5.6 6
2)
Vcc=5 V
C4= 100 pF
C5= 1000 pF
C6= 0.1 F
RBIAS=6.2 k
L1=560 nH C2=100 pF R2=750
(dBm)
Noise Figure (dB) Supply Voltage (V) Current (mA)
R1=30 RF IN C1=68 nF ASG304
R3=20 RF OUT C3=68 nF
114
1) OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 1 MHz. 2) For 6 V operation, RBias should be replaced with 7.5 kohm.
S-parameters
40
Board Layout (FR4, 40x40 mm2, 0.8T)
30
Gain
Gain (dB)
20
10
0
0
50
100
150
200
Frequency (MHz)
0
-5
S11 S22
S11 and S22 (dB)
-10
-15
-20
0
50
100
150
200
Frequency (MHz)
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June 2003

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